Photo-electric device

ABSTRACT

A photo-electric device including a photoelectric conversion layer and a plurality of electrodes is provided. The photoelectric conversion layer includes a plurality of inversed pyramid shaped recesses and a plurality of a pyramids, wherein each of the inversed pyramid shaped recesses has at least three first reflection sidewalls, each of the pyramids is located in one of the inversed pyramid shaped recesses respectively, each of the pyramids has at least three second reflection sidewalls, and none of the first reflection sidewall and the second reflection sidewall is located in a same plane. The electrodes are electrically connected to the photoelectric conversion layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of U.S. application Ser. No. 13/275,317, filed on Oct. 18, 2011,now allowed, which claims the priority benefit of Taiwan applicationserial no. 100122891, filed on Jun. 29, 2011. The entirety of each ofthe above-mentioned patent applications is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND OF THE INVENTION

1. Field of the Application

The present application relates to a multi-reflection structure and aphoto-electric device. More particularly, the present applicationrelates to a multi-reflection structure that reduces surface reflectionand a photo-electric device having the same.

2. Description of Related Art

Recently, photo-electric industries (display industry, solid-stateillumination device industry, solar cell industry, and so on) growrapidly and continuously change living habits of human beings. However,during research and development of the aforesaid photo-electricindustries, surface reflection issue resulted from difference ofrefractive indices is inevitable. In displays, overall brightnessthereof is reduced by surface reflection. In solid-state illuminationdevices (e.g., light-emitting diodes or organic electro-luminescentdevices), illumination performance thereof is reduced by surfacereflection. According to some researches, in organic electro-luminescentdevices, about 70% to 80% optical loss is resulted from surfacereflection.

Similarly, in the solar cells, photoelectric conversion efficiencythereof is reduced by surface reflection also. Specifically, solar cellsare kinds of photo-electric devices that convert light into electricpower. The photoelectric conversion efficiency of solar cells is relatedto photo current and voltage generated therefrom. In order to increasephoto current of solar cells, light absorption of solar cells isrequired to be increased. Since the conventional mono-crystallinesilicon solar cells have sufficient thickness, light absorption ofmono-crystalline silicon solar cells is not a problem. Accordingly, itis imperative to reduce optical loss resulted from surface reflection ofmono-crystalline silicon solar cells.

According to the Fresnel's Law, when light propagates through aninterface of two mediums having different refractive indices,reflectivity of the propagated light is proportional to difference ofrefractive indices. Specifically, the smaller the difference of therefractive indices of the two mediums is, the lower the reflectivity ofthe propagated light can be obtained. On the contrary, the greater thedifference of the refractive indices of the two mediums is, the higherthe reflectivity of the propagated light can be obtained. Take siliconsubstrates that are often used in semiconductor devices as an example,refractive index thereof is about 3 to 4. When light propagates theinterface of air and the silicon substrate having a flat surface,reflectivity of the propagated light is considerably high (e.g.,reflectivity is about 36%).

In the conventional solar cells, a hydrogen containing amorphous siliconnitride serving as an anti-reflection coating is suggested to be formedon the solar cells to reduce surface reflection issue and enhancephotoelectric conversion efficiency of solar cells. However, theanti-reflection coating cannot significantly enhance photoelectricconversion efficiency of solar cells. According, some prior arts (e.g.,U.S. Pat. No. 5,081,049, U.S. Pat. No. 5,080,725, US 2009/071536, TWM354858, and U.S. Pat. No. 7,368,655) have proposed. In the aforesaidprior arts, Optical micro-structures are suggested to be formed on alight-incident surface of solar cells, such that light incident from thelight-incident surface of solar cells can be reflected twice and opticalloss resulted from surface reflection can be reduced. However, in theaforesaid prior arts (e.g., U.S. Pat. No. 5,081,049, U.S. Pat. No.5,080,725, US 2009/071536, TWM 354858, U.S. Pat. No. 7,368,655), sincealmost light is reflected by the optical micro-structures twice, opticalloss resulted from surface reflection cannot be reduced significantly.

As such, it is imperative to further reduce optical loss resulted fromsurface reflection.

SUMMARY OF THE INVENTION

The present application provides a multi-reflection structure and aphoto-electric device having favorable optical performance.

The present application provides a multi-reflection structure comprisinga substrate and a pyramid. The substrate comprises an inversed pyramidshaped recess having at least three first reflection sidewalls. Thepyramid is disposed on the substrate and is located in the inversedpyramid shaped recess. The pyramid has at least three second reflectionsidewalls, wherein a normal of each of the second reflection sidewallsand a normal of each of the first reflection sidewalls are not locatedin the same plane.

The present application provides a multi-reflection structure comprisinga substrate at least one first pyramid and at least one second pyramid.The first pyramid is disposed on the substrate and has at least threefirst reflection sidewalls. The second pyramid is disposed on thesubstrate and has at least three second reflection sidewalls, wherein anormal of each of the second reflection sidewalls and a normal of eachof the first reflection sidewalls are not located in the same plane.

The present application provides a photo-electric device comprising aphotoelectric conversion layer and a plurality of electrodes. Thephotoelectric conversion layer comprises a plurality of inversed pyramidshaped recesses and a plurality of a pyramids, wherein each of theinversed pyramid shaped recesses has at least three first reflectionsidewalls, each of the pyramids is located in one of the inversedpyramid shaped recesses respectively, each of the pyramids has at leastthree second reflection sidewalls, and a normal of each of the secondreflection sidewalls and a normal of each of the first reflectionsidewalls are not located in the same plane. Furthermore, the electrodesare electrically connected to the photoelectric conversion layer.

In order to the make the aforementioned and other objects, features andadvantages of the present application comprehensible, severalembodiments accompanied with figures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings constituting a part of this specification areincorporated herein to provide a further understanding of the invention.Here, the drawings illustrate embodiments of the invention and, togetherwith the description, serve to explain the principles of the invention.

FIG. 1A is a perspective view of a multiple-reflection structureaccording to the first embodiment of the present application.

FIG. 1B is a top view of the multiple-reflection structure according tothe first embodiment of the present application.

FIG. 1C is a cross-sectional view of a multiple-reflection structureaccording to the first embodiment of the present application.

FIG. 2A through FIG. 2E are top views and cross-sectional views ofdifferent multiple-reflection structures according to the firstembodiment of the present application.

FIG. 3A and FIG. 3B are schematic views of a multiple-reflectionstructure according to the second embodiment of the present application.

FIG. 4 is a schematic view of a photo-electric device according to thethird embodiment of the present invention.

FIG. 5 is a SEM view of the multiple-reflection structure as depicted inFIG. 1A.

FIG. 6 is a simulation result regarding to reflectivity of themultiple-reflection structure according to the first embodiment of thepresent application.

DESCRIPTION OF EMBODIMENTS First Embodiment

FIG. 1A is a perspective view of a multiple-reflection structureaccording to the first embodiment of the present application. FIG. 1B isa top view of the multiple-reflection structure according to the firstembodiment of the present application. FIG. 1C is a cross-sectional viewof a multiple-reflection structure according to the first embodiment ofthe present application. Referring to FIG. 1A through FIG. 1C, themulti-reflection structure 100 of the present embodiment includes asubstrate 110 and at least one pyramid 120. The substrate 110 includesan inversed pyramid shaped recess 112 having at least three firstreflection sidewalls 112 a. The pyramid 120 is disposed on the substrate110 and is located in the inversed pyramid shaped recess 112. Thepyramid 120 has at least three second reflection sidewalls 120 a,wherein a normal NL2 of each of the second reflection sidewalls 120 aand a normal NL1 of each of the first reflection sidewalls 112 a are notlocated in the same plane. In this embodiment, the number of theinversed pyramid shaped recess 112 may be plural, the number of thepyramid 120 may be plural, and the number of the inversed pyramid shapedrecess 112 is the same as the number of the pyramid 120. For example,the plurality of inversed pyramid shaped recesses 112 are arranged inarray on a light-incident surface 110 a of the substrate 110.

In this embodiment, the substrate 110 is, for example, a siliconsubstrate, a plastic substrate, a glass substrate, a quartz substrate ora metal substrate. The substrate 110 and the pyramid 120 are of the samematerial. Take the silicon substrate as an example, the inversed pyramidshaped recess 112 and the pyramid 120 are formed by an anisotropicetching process. The etchant used in the anisotropic etching process is,for example, a water solution of KOH or a water solution of tetra methylammonium hydroxide (TMAH). The composition of etchant, the concentrationof etchant and the process time of the anisotropic etching process canbe properly modified by one ordinary skilled in the art. Accordingly,the composition of etchant, the concentration of etchant and the processtime of the anisotropic etching process are not limited in the presentapplication. Further, the inversed pyramid shaped recess 112 and thepyramid 120 on the silicon substrate can also be fabricated bythermo-compression or UV curing. Take the plastic substrate as anexample, the inversed pyramid shaped recess 112 and the pyramid 120thereon can be fabricated by molding process or stamping process. Takethe glass, quartz or metal substrate as an example, the inversed pyramidshaped recess 112 and the pyramid 120 thereon can be fabricated byetching process or stamping process.

As shown in FIG. 1A through FIG. 1C, the number of the first reflectionsidewalls 112 a is 4, the number of the second reflection sidewalls 120a is 8, wherein each of the first reflection sidewalls 112 a is a flatsurface, and each of the second reflection sidewalls 120 a is a flatsurface. It is noted that the number of the first reflection sidewalls112 a and the number of the second reflection sidewalls 120 a are notlimited in the application. In other words, the number of the firstreflection sidewalls 112 a is N1 (N1 is an integral greater than orequal to 3), and the number of the second reflection sidewalls 120 a isN2 (N2 is an integral greater than or equal to 3). The relationship ofN1 and N2 is not limited in this embodiment. Base on actualrequirements, N1 may be smaller than N2. In another embodiment of thepresent application, N1 may be equal to or greater than N2.

In this embodiment, each one of the four first reflection sidewalls 112a has substantially the same area, and each one of the eight secondreflection sidewalls 120 a has substantially the same area. In otherwords, the pyramid 120 has regular polygonal bottom surface. It is notedthat the area of each first reflection sidewalls 112 a does not requiredto be the same as the area of each second reflection sidewalls 120 a.

For example, when the number of the first reflection sidewalls 112 a is4, the number of the second reflection sidewalls 120 a may be 4, 6, 8,16 or 32, as shown in FIG. 2A through FIG. 2E. When the number of thefirst reflection sidewalls 112 a and the number of the second reflectionsidewalls 120 a are the same (i.e., N1=N2), adjoining lines L1 betweenany two adjacent first reflection sidewalls 112 a are not aligned withthe crest lines L2 between any two adjacent second reflection sidewalls120 a, as shown in FIG. 2A. When N1<N2 and N2 is not an integralmultiple of N2, each of the adjoining lines L1 is not aligned with anyone of the crest lines L2, as shown in FIG. 2B. When N1<N2 and N2 is anintegral multiple of N2, parts of the adjoining lines L1 are alignedwith the crest lines L2, and the rest of the adjoining lines L1 are notaligned with the crest lines L2, as shown in FIG. 2C through FIG. 2E.

In this embodiment, with respect to the light-incident surface 110 a,each of the first reflection sidewalls 112 a has an inclined angle θ1,and 45°<θ1≦90°. For example, the aforesaid inclined angle θ1 is about54.7°. In addition, with respect to the light-incident surface 110 a,each of the second reflection sidewalls 120 a has an inclined angle θ1,and 45°<θ2≦90°. For example, the aforesaid inclined angle θ2 is about71.4°. It is noted that the inclined angle θ1 is not required to beidentical with the inclined angle θ2. One ordinary skilled in the artmay modify the inclined angle θ1 and the inclined angle θ2 according tothe incident angle of light.

Please refer to FIG. 1C, the height H of the pyramid 120 this embodimentmay be smaller than or substantially equal to the depth D of theinversed pyramid shaped recess 112. For example, the height H of thepyramid 120 ranges from 0.05 micrometer to 500 micrometers, and thedepth D of the inversed pyramid shaped recess 112 ranges from 0.05micrometer to 500 micrometers. Further, the maximum width W of theinversed pyramid shaped recess 112 ranges from 0.1 micrometer to 1000micrometers.

When the number of the first reflection sidewalls 112 a is 4, the numberof the second reflection sidewalls 120 a is 8, the inclined angle θ1 isabout 54.7°, and the inclined angle θ2 is about 71.4°, approximately 44%of light is twice reflected, approximately 47% of light is reflectedthree times, and approximately 9% of light is reflected four times.Accordingly, an overall reflectivity of the multi-reflection structure100 of this embodiment can be reduced to about 5%. Compared withreflectivity (about 10%) of the prior art (U.S. Pat. No. 7,368,655), themulti-reflection structure 100 of this embodiment can effectively lowersurface reflection issue.

Second Embodiment

FIG. 3A and FIG. 3B are schematic views of a multiple-reflectionstructure according to the second embodiment of the present application.Referring to FIG. 3A through FIG. 3B, the multi-reflection structure 200of this embodiment includes a substrate 210, at least one first pyramid220 and at least one second pyramid 230. The first pyramid 220 isdisposed on the substrate 210 and has at least three first reflectionsidewalls 222. The second pyramid 230 is disposed on the substrate 210and has at least three second reflection sidewalls 232, wherein a normalNL2 of each of the second reflection sidewalls 323 and a normal NL1 ofeach of the first reflection sidewalls 222 are not located in the sameplane.

In this embodiment, the substrate 210 is, for example, a siliconsubstrate, a plastic substrate, a glass substrate, a quartz substrate ora metal substrate. The substrate 210, the first pyramid 220 and thesecond pyramid 230 are of the same material. Take the silicon substrateas an example, the first pyramid 220 and the second pyramid 230 areformed by an anisotropic etching process. The etchant used in theanisotropic etching process is, for example, a water solution of KOH ora water solution of tetra methyl ammonium hydroxide (TMAH). Thecomposition of etchant, the concentration of etchant and the processtime of the anisotropic etching process can be properly modified by oneordinary skilled in the art. Accordingly, the composition of etchant,the concentration of etchant and the process time of the anisotropicetching process are not limited in the present application. Further, thefirst pyramid 220 and the second pyramid 230 on the silicon substratecan also be fabricated by thermo-compression or UV curing. Take theplastic substrate as an example, the first pyramid 220 and the secondpyramid 230 thereon can be fabricated by molding process or stampingprocess. Take the glass, quartz or metal substrate as an example, thefirst pyramid 220 and the second pyramid 230 thereon can be fabricatedby etching process or stamping process.

As shown in FIG. 3A, the number of the first reflection sidewalls 222 is4, the number of the second reflection sidewalls 232 is 4, wherein eachborder of the bottom surface the first pyramid 220 is not parallel withany one border of the bottom surface the second pyramid 230. Inaddition, each of the first reflection sidewalls 222 is a flat surface,and each of the second reflection sidewalls 232 is a flat surface.

As shown in FIG. 3B, the number of the first reflection sidewalls 222 is4, the number of the second reflection sidewalls 232 is 3, wherein eachof the first reflection sidewalls 222 is a flat surface, and each of thesecond reflection sidewalls 232 is a flat surface. It is noted that thenumber of the first reflection sidewalls 222 and the number of thesecond reflection sidewalls 232 are not limited in the application. Inother words, the number of the first reflection sidewalls 222 is N1 (N1is an integral greater than or equal to 3), and the number of the secondreflection sidewalls 232 is N2 (N2 is an integral greater than or equalto 3). The relationship of N1 and N2 is not limited in this embodiment.Base on actual requirements, N1 may be smaller than, equal to or greaterthan N2.

In this embodiment, each one of the four first reflection sidewalls 222has substantially the same area, and each one of the second reflectionsidewalls 232 has substantially the same area. In other words, the firstpyramid 220 has regular polygonal bottom surface, and the second pyramid230 has regular polygonal bottom surface. It is noted that the area ofeach first reflection sidewalls 222 does not required to be the same asthe area of each second reflection sidewalls 232.

In this embodiment, with respect to the substrate 210, each of the firstreflection sidewalls 222 has an inclined angle θ1, and 45°<θ1≦90°. Forexample, the aforesaid inclined angle θ1 is about 54.7°. In addition,with respect to the substrate 210, each of the second reflectionsidewalls 232 has an inclined angle θ1, and 45°<θ2≦90°. For example, theaforesaid inclined angle θ2 is about 54.7°. It is noted that theinclined angle θ1 is not required to be identical with the inclinedangle θ2. One ordinary skilled in the art may modify the inclined angleθ1 and the inclined angle θ2 according to the incident angle of light.

In the present embodiment, the height H1 of the first pyramid 220 may besubstantially equal to height H2 of the second pyramid 230. For example,the height H1 of the first pyramid 220 ranges from 0.05 micrometer to500 micrometers, and the height H2 of the second pyramid 230 ranges from0.05 micrometer to 500 micrometers.

The Third Embodiment

FIG. 4 is a schematic view of a photo-electric device according to thethird embodiment of the present invention. Referring to FIG. 4, thephoto-electric device 300 of this embodiment includes a photoelectricconversion layer 310 and a plurality of electrodes 320 a, 320 b. Thephotoelectric conversion layer 310 includes a plurality of inversedpyramid shaped recesses 312 and a plurality of a pyramids 314, whereineach of the inversed pyramid shaped recesses 312 has at least threefirst reflection sidewalls 312 a, each of the pyramids 314 is located inone of the inversed pyramid shaped recesses 312 respectively, each ofthe pyramids 314 has at least three second reflection sidewalls 314 a,and a normal NL2 of each of the second reflection sidewalls 314 a and anormal NL1 of each of the first reflection sidewalls 312 a are notlocated in the same plane. Furthermore, the electrodes 320 a and 320 bare electrically connected to the photoelectric conversion layer 310.

Since the inversed pyramid shaped recesses 312 and the pyramids 314 ofthis embodiment are the same as the inversed pyramid shaped recesses 112and the pyramids 120, description regarding to the inversed pyramidshaped recesses 312 and the pyramids 314 is omitted.

For example, the material of the photoelectric conversion layer 310 ismono-crystalline silicon, poly-crystalline silicon, amorphous silicon,CdTe, CIS, CIGS, Ge, AlInGaAs or active materials of the polymer solarcell.

In this embodiment, the photoelectric conversion layer 310 includes ap-type doped silicon substrate 310 a, a n-type lightly doped region 310b, a plurality of n-type heavily doped region 310 c electricallyconnected to the electrode 320 a, and a plurality of p-type heavilydoped region 310 c electrically connected to the electrode 320 b. Thephotoelectric conversion layer 310 is capable of converting light intoelectric power. In other words, the photo-electric device 300 of thisembodiment is a solar cell. Though the photoelectric conversion layer310 shown in FIG. 4 is illustrated here, the photoelectric conversionlayer 310 can be modified by one ordinary skilled in the art. In otherwords, different types of photoelectric conversion layers can be used inthe present application.

As shown in FIG. 4, the photo-electric device 300 of this embodiment mayfurther include an anti-reflection coating 330 that covers the inversedpyramid shaped recesses 312 and the pyramids 314. For example, thematerial of the anti-reflection coating 330 is silicon nitride (SiNx),silicon oxide (SiO₂), ZnS, TiO₂, ZnO, SnO₂, MgF₂, CaF₂, Al₂O₃, LiF, NaF,mesoporous silicon, mesoporous silica. Of course, the anti-reflectioncoating 330 may be formed by stacking the above-mentioned materials.

Experimental Example

FIG. 5 is a SEM view of the multiple-reflection structure as depicted inFIG. 1A. Referring to FIG. 5 and FIG. 1A, in this embodiment, theinversed pyramid shaped recess 112 has four first reflection sidewalls112 a, the pyramid 120 has eight second reflection sidewalls 120 a, theinclined angle θ1 is about 54.7° (as shown in FIG. 1C), and the inclinedangle θ2 is about 71.4° (as shown in FIG. 1C).

Referring to FIG. 6, curve A represents simulated reflectivity of asubstrate having a flat surface, curve B represents simulatedreflectivity of a substrate having inversed pyramid shaped recesses, andcurve C represents simulated reflectivity of a substrate having inversedpyramid shaped recesses and pyramids. As shown in FIG. 6, the simulatedreflectivity of the first embodiment (curve C) is lower than the othertwo (curves A and B). Accordingly, surface reflection can be reduced bythis application.

This application can be applied to displays, solid-state illuminationdevices, solar cells, optical films, and so on. Accordingly, surfacereflection can be reduced and photoelectric conversion efficiency of thephoto-electric devices.

Although the present invention has been disclosed above by theembodiments, they are not intended to limit the present invention.Anybody skilled in the art can make some modifications and alterationwithout departing from the spirit and scope of the present invention.Therefore, the protecting range of the present invention falls in theappended claims.

What is claimed is:
 1. A photo-electric device, comprising: aphotoelectric conversion layer, comprising a plurality of inversedpyramid shaped recesses and a plurality of a pyramids, wherein each ofthe inversed pyramid shaped recesses has at least three first reflectionsidewalls, each of the pyramids is located in one of the inversedpyramid shaped recesses respectively, each of the pyramids has at leastthree second reflection sidewalls, and none of the first reflectionsidewall and the second reflection sidewall is located in a same plane;and a plurality of electrodes, electrically connected to thephotoelectric conversion layer.
 2. The photo-electric device of claim 1,wherein a number of the first reflection sidewalls is N1, a number ofthe second reflection sidewalls is N2, and N1<N2.
 3. The photo-electricdevice of claim 1, wherein each of the first reflection sidewalls is aflat surface, and each of the second reflection sidewalls is a flatsurface.
 4. The photo-electric device of claim 1, further comprising ananti-reflection coating covering the inversed pyramid shaped recessesand the pyramids.